Carrier localization and out of plane anisotropic magnetoresistance in $Nd_{0.55-x} Sm_x Sr_{0.45} Mn O_3$ thin films

摘要

The impact of carrier localization on the anisotropic magnetoresistance (AMR)has been investigated in NSSMO thin films. Carrier localization is caused bythe reduced average radius of the A-site of the perovskite lattice and enhancedsize disorder due to substitution of smaller cations for larger.